power mosfet.
Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Transformer
.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 125.28KB)